Manufacturer Part Number
MJ15003G
Manufacturer
onsemi
Introduction
High-power bipolar junction transistor (BJT) suitable for power amplifier and switching applications.
Product Features and Performance
Power rating up to 250W
Collector-emitter breakdown voltage of 140V
Collector current up to 20A
Transition frequency of 2MHz
High DC current gain of 25 or more
Product Advantages
Robust and reliable performance
Efficient power handling capabilities
Suitable for high-current, high-voltage applications
Stable operation over wide temperature range
Key Technical Parameters
Power Rating: 250W
Collector-Emitter Breakdown Voltage: 140V
Collector Current: 20A
Transition Frequency: 2MHz
DC Current Gain: 25 (min)
Quality and Safety Features
ROHS3 compliant
Designed for reliable and safe operation
Compatibility
Through-hole mounting in TO-204 (TO-3) package
Application Areas
Power amplifiers
Switching regulators
Motor controls
Industrial and automotive electronics
Product Lifecycle
Currently in active production
Widely available replacement options from onsemi and other manufacturers
Key Reasons to Choose
Exceptional power handling capability
High voltage and current ratings
Stable performance across wide temperature range
Proven reliability and safety in demanding applications
Readily available from reputable manufacturer
