MGSF1P02LT1 - onsemi

Manufacturer Part Number

MGSF1P02LT1

Manufacturer

onsemi

Introduction

The MGSF1P02LT1 is a P-channel enhancement mode power MOSFET in a SOT-23-3 package.

Product Features and Performance

P-channel MOSFET with 20V drain-source voltage

Low on-resistance of 350mOhm @ 1.5A, 10V

Continuous drain current of 750mA at 25°C

Input capacitance of 130pF @ 5V

Maximum power dissipation of 400mW at 25°C

Operating temperature range of -55°C to 150°C

Product Advantages

Compact SOT-23-3 surface mount package

Low on-resistance for efficient power conversion

High-temperature operation capability

Key Technical Parameters

Drain-Source Voltage (Vdss): 20V

Gate-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 350mOhm @ 1.5A, 10V

Continuous Drain Current (Id): 750mA at 25°C

Input Capacitance (Ciss): 130pF @ 5V

Power Dissipation (Pd): 400mW at 25°C

Quality and Safety Features

RoHS non-compliant

Compatibility

TO-236-3, SC-59, SOT-23-3 package

Application Areas

Power management circuits

Switching circuits

Motor control

Lighting control

Electronic load switches

Product Lifecycle

The MGSF1P02LT1 is an active product, and there are no plans for discontinuation or upgrades at this time.

Several Key Reasons to Choose This Product

Compact surface mount package

Low on-resistance for efficient power conversion

High-temperature operation capability

Suitable for a wide range of power management and switching applications