Manufacturer Part Number
MGSF2N02ELT1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Product Features and Performance
N-Channel MOSFET
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V
Current Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 5 V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4 V
Product Advantages
High performance MOSFET in a small package
Suitable for various power management and switching applications
Key Technical Parameters
Manufacturer Part Number: MGSF2N02ELT1G
Package / Case: TO-236-3, SC-59, SOT-23-3
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for a wide range of power management and switching applications
Application Areas
Power management
Switching applications
Product Lifecycle
This product is an active and ongoing part of onsemi's portfolio.
Several Key Reasons to Choose This Product
High performance MOSFET in a small package
Suitable for a wide range of power management and switching applications
RoHS3 compliant
Competitively priced and readily available
MGSF1P02LT1GSIPUSEMI