Manufacturer Part Number
MGSF1N03LT1
Manufacturer
onsemi
Introduction
Discrete semiconductor product
Single N-channel MOSFET transistor
Product Features and Performance
30V drain-to-source voltage
100mOhm maximum on-resistance @ 1.2A, 10V
6A continuous drain current @ 25°C
140pF maximum input capacitance @ 5V
4V maximum gate-to-source threshold voltage @ 250μA
Product Advantages
Efficient power conversion and control
Compact surface-mount package
Reliable MOSFET technology
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Drain-to-Source On-Resistance (Rds(on)): 100mOhm
Continuous Drain Current (Id): 1.6A
Input Capacitance (Ciss): 140pF
Gate-to-Source Threshold Voltage (Vgs(th)): 2.4V
Quality and Safety Features
RoHS non-compliant
Compatibility
Standard TO-236-3 (SOT-23-3) surface-mount package
Application Areas
Power management and control circuits
Switching power supplies
Motor drives
Telecommunications equipment
Product Lifecycle
Mature product
Replacement and upgrade options available
Key Reasons to Choose This Product
Efficient power handling capabilities
Low on-resistance for low power loss
Compact surface-mount packaging
Reliable MOSFET technology
MGSF1N03SIPUSEMI