MGSF1N02LT1G - onsemi

Manufacturer Part Number

MGSF1N02LT1G

Manufacturer

onsemi

Introduction

This is a discrete N-channel MOSFET transistor from onsemi, suitable for a variety of power switching and amplification applications.

Product Features and Performance

N-channel MOSFET with a drain-source voltage (Vdss) of 20V

Low on-resistance (Rds(on)) of 90mΩ at 1.2A, 10V

Continuous drain current (Id) of 750mA at 25°C

Input capacitance (Ciss) of 125pF at 5V

Power dissipation (Pd) of 400mW at 25°C

Wide operating temperature range of -55°C to 150°C

Product Advantages

Efficient power switching and amplification

Small surface mount package (SOT-23-3)

Reliable performance across a wide temperature range

Key Technical Parameters

Drain-Source Voltage (Vdss): 20V

Gate-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 90mΩ @ 1.2A, 10V

Drain Current (Id): 750mA @ 25°C

Input Capacitance (Ciss): 125pF @ 5V

Power Dissipation (Pd): 400mW @ 25°C

Quality and Safety Features

RoHS3 compliant

Suitable for reliable, long-term operation

Compatibility

Compatible with standard surface mount assembly processes

Suitable for a variety of power electronics applications

Application Areas

Power switching and amplification circuits

Motor control

DC-DC converters

General-purpose power electronics

Product Lifecycle

This product is an active, in-production part from onsemi

Replacements and upgrades may be available as technology evolves

Key Reasons to Choose This Product

Efficient power switching performance with low on-resistance

Compact surface mount package for space-constrained designs

Wide operating temperature range for reliable operation

RoHS compliance for use in environmentally-conscious applications

Compatibility with standard assembly processes for easy integration