MBT3904DW1T3G - onsemi

Manufacturer Part Number

MBT3904DW1T3G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT) Array

Product Features and Performance

2 NPN Transistors

300MHz Transition Frequency

150mW Maximum Power

40V Maximum Collector-Emitter Voltage

200mA Maximum Collector Current

300mV Maximum Collector-Emitter Saturation Voltage

100 Minimum DC Current Gain

-55°C to 150°C Operating Temperature Range

Product Advantages

High-frequency performance

Low power consumption

Small package size

Wide temperature range

Key Technical Parameters

Package: 6-TSSOP, SC-88, SOT-363

Mounting Type: Surface Mount

RoHS Compliance: RoHS3 Compliant

Quality and Safety Features

Manufacturer's Packaging: Tape & Reel (TR)

Compatibility

Compatible with various electronic circuit designs

Application Areas

Suitable for use in a wide range of electronic devices and applications requiring high-frequency, low-power transistor arrays

Product Lifecycle

Currently available, no plans for discontinuation

Several Key Reasons to Choose This Product

High-frequency performance for efficient circuit design

Low power consumption for energy-efficient applications

Small package size for compact design

Wide operating temperature range for diverse environmental conditions

RoHS compliance for environmentally-friendly use

Reliable and consistent quality through manufacturer's packaging