Manufacturer Part Number
MBT35200MT1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product - Bipolar Junction Transistor (BJT), Single
Product Features and Performance
Operating Temperature Range: -55°C to 150°C
Max Power Dissipation: 625 mW
Max Collector-Emitter Breakdown Voltage: 35 V
Max Collector Current: 2 A
Max Collector Cutoff Current: 100 nA
Typical Collector-Emitter Saturation Voltage: 310 mV @ 20 mA, 2 A
Min DC Current Gain (hFE): 100 @ 1.5 A, 1.5 V
Transition Frequency: 100 MHz
Product Advantages
Excellent high voltage and high current handling capability
Wide operating temperature range
Surface mount package for compact design
Key Technical Parameters
Package: SOT-23-6 Thin, TSOT-23-6
RoHS Compliant
Quality and Safety Features
ROHS3 Compliant
Compatibility
Standard surface mount package
Application Areas
High power switching circuits
Power amplifier circuits
Industrial control systems
Product Lifecycle
Current product, no discontinuation planned
Replacement or upgraded parts available if needed
Several Key Reasons to Choose This Product
High voltage and current handling for demanding applications
Wide temperature range for versatile use cases
Compact surface mount package for space-constrained designs
Robust quality and safety features (RoHS3 compliant)
Readily available and supported by the manufacturer
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