MBT35200MT1 - onsemi

Manufacturer Part Number

MBT35200MT1

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single

Product Features and Performance

Power Rating: 625 mW

Collector-Emitter Breakdown Voltage: 35 V

Collector Current: 2 A

Collector Cutoff Current: 100 nA

Collector-Emitter Saturation Voltage: 310 mV @ 20 mA, 2 A

DC Current Gain: 100 @ 1.5 A, 1.5 V

Transition Frequency: 100 MHz

Product Advantages

High power handling capability

Low saturation voltage

High current gain

High transition frequency

Key Technical Parameters

Package: SOT-23-6 Thin, TSOT-23-6

Transistor Type: PNP

Mounting Type: Surface Mount

Quality and Safety Features

RoHS non-compliant

Compatibility

Compatible with various electronic circuit designs requiring a high-performance PNP bipolar transistor

Application Areas

Power amplifiers

Switching circuits

Voltage regulator circuits

Audio amplifiers

Product Lifecycle

This product is currently available and not nearing discontinuation.

Replacement or upgrade options may be available from the manufacturer.

Key Reasons to Choose This Product

Excellent power handling capability for high-current applications

Low saturation voltage for efficient operation

High current gain for improved circuit performance

High transition frequency enabling high-speed switching