Manufacturer Part Number
MBT35200MT1
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
Power Rating: 625 mW
Collector-Emitter Breakdown Voltage: 35 V
Collector Current: 2 A
Collector Cutoff Current: 100 nA
Collector-Emitter Saturation Voltage: 310 mV @ 20 mA, 2 A
DC Current Gain: 100 @ 1.5 A, 1.5 V
Transition Frequency: 100 MHz
Product Advantages
High power handling capability
Low saturation voltage
High current gain
High transition frequency
Key Technical Parameters
Package: SOT-23-6 Thin, TSOT-23-6
Transistor Type: PNP
Mounting Type: Surface Mount
Quality and Safety Features
RoHS non-compliant
Compatibility
Compatible with various electronic circuit designs requiring a high-performance PNP bipolar transistor
Application Areas
Power amplifiers
Switching circuits
Voltage regulator circuits
Audio amplifiers
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Excellent power handling capability for high-current applications
Low saturation voltage for efficient operation
High current gain for improved circuit performance
High transition frequency enabling high-speed switching
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