MBT2222ADW1T1G - onsemi

Manufacturer Part Number

MBT2222ADW1T1G

Manufacturer

onsemi

Introduction

Dual NPN Bipolar Junction Transistor (BJT) array in a small SC-88/SC70-6/SOT-363 package.

Product Features and Performance

Operates at temperatures from -55°C to 150°C

Power dissipation up to 150mW

Collector-Emitter Breakdown Voltage up to 40V

Collector Current up to 600mA

Collector Cutoff Current down to 10nA

Vce Saturation Voltage down to 1V @ 50mA, 500mA

DC Current Gain (hFE) of at least 100 @ 150mA, 10V

Transition Frequency up to 300MHz

Product Advantages

Compact SC-88/SC70-6/SOT-363 package

High power and current handling capabilities

Low saturation voltage for efficient operation

Wide temperature range

High frequency performance

Key Technical Parameters

Manufacturer Part Number: MBT2222ADW1T1G

Package: 6-TSSOP, SC-88, SOT-363

RoHS Compliance: ROHS3 Compliant

Operating Temperature: -55°C to 150°C

Power Dissipation: 150mW

Collector-Emitter Breakdown Voltage: 40V

Collector Current: 600mA

Collector Cutoff Current: 10nA

Vce Saturation Voltage: 1V @ 50mA, 500mA

DC Current Gain (hFE): 100 min @ 150mA, 10V

Transition Frequency: 300MHz

Quality and Safety Features

RoHS3 compliant for environmental responsibility

Housed in a compact and reliable SC-88/SC70-6/SOT-363 package

Compatibility

Suitable for a wide range of electronic circuit applications, including amplifiers, switches, and logic circuits.

Application Areas

Amplifiers

Switches

Logic circuits

General-purpose electronics

Product Lifecycle

Current product, not nearing discontinuation.

Replacements and upgrades are available if needed.

Key Reasons to Choose This Product

High power and current handling capabilities

Low saturation voltage for efficient operation

Wide temperature range for diverse applications

Compact package for space-constrained designs

High frequency performance for high-speed circuits

RoHS3 compliance for environmental responsibility