Manufacturer Part Number
MBT3906DW1T1G
Manufacturer
onsemi
Introduction
Dual PNP bipolar junction transistor (BJT) array
Product Features and Performance
Operates at -55°C to 150°C junction temperature
Low collector-emitter saturation voltage
High frequency transition
High DC current gain
Surface mount packaging
Product Advantages
Compact size for space-constrained designs
Excellent thermal performance
Robust electrical characteristics
Key Technical Parameters
Power dissipation: 150mW
Collector-emitter breakdown voltage: 40V
Collector current: 200mA
Collector-emitter saturation voltage: 400mV @ 5mA, 50mA
DC current gain: 100 @ 10mA, 1V
Transition frequency: 250MHz
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging
Compatibility
SC-88/SC70-6/SOT-363 package
Application Areas
General-purpose amplifier and switching applications
Portable electronic devices
Industrial control systems
Product Lifecycle
Current product, no plans for discontinuation
Key Reasons to Choose This Product
Compact surface mount package
Excellent thermal and electrical performance
Robust and reliable operation
Suitable for a wide range of applications