Manufacturer Part Number
MBT3946DW1T1G
Manufacturer
onsemi
Introduction
The MBT3946DW1T1G is a high-performance transistor array from onsemi, designed for a variety of electronic applications.
Product Features and Performance
Optimized for high-speed switching and amplification
Wide operating temperature range of -55°C to 150°C
Low collector-emitter saturation voltage for efficient operation
High transition frequency up to 300MHz
Low power consumption with a maximum power rating of 150mW
Product Advantages
Compact surface-mount package for space-saving design
Excellent thermal performance for reliable operation
Robust design for long-term reliability
Compatibility with various electronic systems
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 40V
Current Collector (Ic) (Max): 200mA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Transistor Type: NPN, PNP
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency Transition: 300MHz, 250MHz
Quality and Safety Features
RoHS3 compliant for environmentally-friendly design
Rigorous quality control and testing for consistent performance
Compatibility
Compatible with a wide range of electronic systems and applications
Application Areas
Suitable for high-speed switching and amplification in various electronic devices
Applicable in industrial, consumer, and communications equipment
Product Lifecycle
Actively supported by onsemi
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Excellent performance-to-power ratio for efficient operation
Compact and thermally-efficient design for versatile applications
Robust and reliable construction for long-term use
Compatibility with a wide range of electronic systems
Backed by onsemi's reputation for quality and innovation