Manufacturer Part Number
FQU2N100TU
Manufacturer
onsemi
Introduction
The FQU2N100TU is a discrete N-Channel MOSFET transistor from onsemi. It is part of the QFET series and comes in a TO-251-3 Short Leads, IPak, TO-251AA package.
Product Features and Performance
Operating Temperature Range: -55°C to 150°C
Drain to Source Voltage (Vdss): 1000 V
Gate-Source Voltage (Vgs) Max: ±30 V
On-State Resistance (Rds(on)): 9 Ohm @ 800 mA, 10 V
Continuous Drain Current (Id): 1.6 A @ 25°C (Tc)
Input Capacitance (Ciss): 520 pF @ 25 V
Power Dissipation: 2.5 W (Ta), 50 W (Tc)
Gate Charge (Qg): 15.5 nC @ 10 V
Product Advantages
High voltage rating of 1000 V
Low on-state resistance for efficient power switching
Wide operating temperature range
Reliable and durable MOSFET design
Key Technical Parameters
Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
FET Type: N-Channel
Threshold Voltage (Vgs(th)): 5 V @ 250 A
Drive Voltage (Rds(on) Max, Rds(on) Min): 10 V
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Can be used in a variety of power switching and control applications
Application Areas
Switching power supplies
Motor drives
Industrial controls
Automotive electronics
Product Lifecycle
The FQU2N100TU is an actively supported product and is not nearing discontinuation.
Replacement or upgrade options may be available from onsemi.
Key Reasons to Choose This Product
High voltage rating of 1000 V for demanding applications
Low on-state resistance for efficient power switching
Wide operating temperature range for reliable performance
Robust and durable design for long-term usage
RoHS3 compliance for environmental responsibility
