Manufacturer Part Number
FQU20N06LTU
Manufacturer
onsemi
Introduction
The FQU20N06LTU is a discrete semiconductor product, specifically a N-channel MOSFET transistor.
Product Features and Performance
Through-hole mounting design
-55°C to 150°C operating temperature range
60V drain-to-source voltage rating
±20V gate-to-source voltage rating
60mΩ maximum on-resistance at 8.6A, 10V
2A continuous drain current at 25°C case temperature
630pF maximum input capacitance at 25V
5W maximum power dissipation at 25°C ambient temperature, 38W at 25°C case temperature
13nC maximum gate charge at 5V
Product Advantages
High current handling capability
Low on-resistance for improved efficiency
Wide operating temperature range
RoHS3 compliance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 60mΩ @ 8.6A, 10V
Continuous Drain Current (Id): 17.2A @ 25°C
Input Capacitance (Ciss): 630pF @ 25V
Power Dissipation: 2.5W @ 25°C ambient, 38W @ 25°C case
Quality and Safety Features
RoHS3 compliant
Packaged in I-PAK (TO-251-3) short leads
Compatibility
MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
Application Areas
Power electronics
Motor control
Switching circuits
Industrial equipment
Automotive electronics
Product Lifecycle
Currently in production
No known discontinuation plans
Replacements or upgrades may be available
Key Reasons to Choose This Product
High current handling and low on-resistance for improved efficiency
Wide operating temperature range for versatile applications
RoHS3 compliance for environmentally-friendly use
Robust through-hole package design for reliable performance