Manufacturer Part Number
FQU2N60CTU
Manufacturer
Fairchild (onsemi)
Introduction
High-voltage, high-performance N-channel MOSFET
Product Features and Performance
High drain-to-source breakdown voltage of 600V
Low on-resistance down to 4.7 ohms
Continuous drain current up to 1.9A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 235pF
Maximum power dissipation of 2.5W at 25°C or 44W at case temperature
Product Advantages
Excellent performance for high-voltage, high-power applications
Efficient power conversion with low on-resistance
Reliable operation across a wide temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 4.7 ohms @ 950mA, 10V
Continuous Drain Current (Id): 1.9A at 25°C
Input Capacitance (Ciss): 235pF @ 25V
Power Dissipation: 2.5W at 25°C, 44W at case temperature
Quality and Safety Features
MOSFET technology for high reliability
Meets industrial temperature range requirements
Compatibility
Suitable for a variety of high-voltage, high-power applications
Application Areas
Switch-mode power supplies
Motor drives
Inductive heating
Welding equipment
Industrial automation and control
Product Lifecycle
This product is an active part and is not nearing discontinuation.
Replacement or upgrade options may be available from Fairchild (onsemi).
Key Reasons to Choose This Product
High voltage and power handling capabilities
Low on-resistance for efficient power conversion
Wide operating temperature range for reliable performance
Proven MOSFET technology for long-term reliability
Suitability for a wide range of high-voltage, high-power applications