Manufacturer Part Number
FQU2N60CTU
Manufacturer
onsemi
Introduction
The FQU2N60CTU is a discrete semiconductor product, specifically a single N-channel MOSFET transistor.
Product Features and Performance
Operating temperature range of -55°C to 150°C (TJ)
Drain-to-Source voltage (Vdss) of 600V
Maximum gate-to-source voltage (Vgs) of ±30V
Maximum on-resistance (Rds(on)) of 4.7Ω at 950mA and 10V
Continuous drain current (Id) of 1.9A at 25°C (Tc)
Input capacitance (Ciss) of 235pF at 25V
Maximum power dissipation of 2.5W (Ta) and 44W (Tc)
N-channel MOSFET transistor
Maximum threshold voltage (Vgs(th)) of 4V at 250A
Maximum gate charge (Qg) of 12nC at 10V
Product Advantages
High voltage and current handling capabilities
Low on-resistance for efficient power switching
Wide operating temperature range
Key Technical Parameters
Drain-to-Source voltage (Vdss): 600V
Gate-to-Source voltage (Vgs): ±30V
On-resistance (Rds(on)): 4.7Ω
Continuous drain current (Id): 1.9A
Input capacitance (Ciss): 235pF
Power dissipation (Max): 2.5W (Ta), 44W (Tc)
Quality and Safety Features
RoHS3 compliant
MOSFET technology for reliable performance
Compatibility
Through-hole mounting
I-PAK package
Application Areas
Power switching and control applications
Industrial and consumer electronics
Product Lifecycle
Current production model
Replacements or upgrades may be available in the future
Several Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for efficient power switching
Wide operating temperature range
Reliable MOSFET technology
RoHS3 compliance for environmental safety