FQS4903TF - onsemi

Manufacturer Part Number

FQS4903TF

Manufacturer

onsemi

Introduction

High-voltage N-channel dual MOSFET in SOIC-8 package

Suitable for a wide range of power conversion and control applications

Product Features and Performance

Dual N-channel MOSFET configuration

High drain-to-source voltage rating of 500V

Low on-resistance of 6.2Ω (max) at 185mA, 10V

Low input capacitance of 200pF (max) at 25V

Wide operating temperature range of -55°C to 150°C

Power rating of 2W

Product Advantages

Compact SOIC-8 package for space-saving design

High-voltage and low on-resistance characteristics enable efficient power conversion

Dual MOSFET configuration provides design flexibility

Key Technical Parameters

Drain-to-Source Voltage (VDS): 500V

On-Resistance (RDS(on)): 6.2Ω (max) at 185mA, 10V

Input Capacitance (Ciss): 200pF (max) at 25V

Threshold Voltage (VGS(th)): 4V (max) at 250μA

Gate Charge (Qg): 8.2nC (max) at 10V

Quality and Safety Features

RoHS3 compliant

Suitable for surface mount assembly

Compatibility

Tape and reel packaging for automated assembly

Application Areas

Power conversion and control applications

Motor drives

Lighting control

Home appliances

Industrial equipment

Product Lifecycle

Currently in production

No plans for discontinuation or replacement at this time

Key Reasons to Choose This Product

High-voltage and low on-resistance characteristics for efficient power conversion

Compact SOIC-8 package for space-saving design

Dual MOSFET configuration provides design flexibility

Reliable performance across a wide operating temperature range

RoHS3 compliance for environmental responsibility