FQS4901TF - onsemi

Manufacturer Part Number

FQS4901TF

Manufacturer

onsemi

Introduction

Dual N-Channel MOSFET transistor

Product Features and Performance

MOSFET (Metal Oxide Semiconductor Field Effect Transistor) technology

400V drain-to-source voltage

2Ω maximum on-resistance at 225mA, 10V

450mA continuous drain current at 25°C

210pF maximum input capacitance at 25V

4V maximum gate-to-source threshold voltage at 250μA

5nC maximum gate charge at 10V

Product Advantages

Efficient power handling

Low on-resistance for low power loss

Compact surface mount package

Key Technical Parameters

Voltage: 400V drain-to-source

Current: 450mA continuous drain

Resistance: 4.2Ω maximum on-resistance

Capacitance: 210pF maximum input capacitance

Threshold Voltage: 4V maximum gate-to-source

Gate Charge: 7.5nC maximum

Quality and Safety Features

ROHS3 compliant

Compatibility

8-SOIC (0.154", 3.90mm Width) package

Application Areas

Power amplifiers

Motor controls

Switching power supplies

Industrial and consumer electronics

Product Lifecycle

Current production, no known discontinuation

Key Reasons to Choose This Product

Efficient power handling with low on-resistance

Compact surface mount package

Broad temperature range of -55°C to 150°C

Reliable MOSFET technology from a trusted manufacturer