Manufacturer Part Number
IRF5852TRPBF
Manufacturer
Infineon Technologies
Introduction
This is a dual N-channel MOSFET transistor in a SOT-23-6 (TSOT-23-6) package.
Product Features and Performance
Operating temperature range: -55°C to 150°C
Power rating: 960mW
Drain-to-source voltage (Vdss): 20V
On-resistance (Rds(on)): 90mΩ @ 2.7A, 4.5V
Continuous drain current (Id): 2.7A @ 25°C
Input capacitance (Ciss): 400pF @ 15V
Gate threshold voltage (Vgs(th)): 1.25V @ 250μA
Gate charge (Qg): 6nC @ 4.5V
Product Advantages
Logic level gate for easy control
Compact SOT-23-6 (TSOT-23-6) surface mount package
Suitable for high-frequency, high-power switching applications
Key Technical Parameters
MOSFET technology
2 N-channel configuration
Tape and reel packaging
Quality and Safety Features
AEC-Q101 qualified for automotive applications
RoHS and halogen-free compliant
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
Switch-mode power supplies
Motor drives
Lighting control
General-purpose power switching
Product Lifecycle
Currently in production
Replacement and upgrade options available from Infineon
Key Reasons to Choose This Product
High power density and efficiency
Robust and reliable performance
Ease of integration in compact, high-frequency circuits
Suitability for a wide range of power switching applications