Manufacturer Part Number
IRF5851TRPBF
Manufacturer
Infineon Technologies
Introduction
High-performance, logic-level N-channel and P-channel MOSFET array
Integrated in a single package for space-saving and improved thermal performance
Product Features and Performance
Operates in the temperature range of -55°C to 150°C
Supports a maximum power of 960mW
Configured as N and P-Channel MOSFET
Drain-to-Source Voltage (Vdss) of 20V
Very low on-resistance (Rds(on)) of 90mOhm at 2.7A, 4.5V
Input Capacitance (Ciss) of 400pF at 15V
Logic-level gate with a threshold voltage (Vgs(th)) of 1.25V at 250μA
Gate Charge (Qg) of 6nC at 4.5V
Product Advantages
Compact and space-saving design with integrated N and P-Channel MOSFETs
Excellent thermal performance due to the integrated package
Suitable for a wide range of applications with the wide operating temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20V
On-Resistance (Rds(on)): 90mOhm @ 2.7A, 4.5V
Continuous Drain Current (Id): 2.7A at 25°C, 2.2A
Input Capacitance (Ciss): 400pF @ 15V
Gate Threshold Voltage (Vgs(th)): 1.25V @ 250μA
Gate Charge (Qg): 6nC @ 4.5V
Quality and Safety Features
Meets industrial-grade reliability and safety standards
Robust design for harsh environmental conditions
Compatibility
Suitable for a wide range of electronic devices and circuits
Application Areas
Switching and control applications
Power management circuits
Automotive electronics
Industrial controls
Consumer electronics
Product Lifecycle
Currently in production
No plans for discontinuation
Replacement or upgrade options available
Key Reasons to Choose this Product
Compact and integrated design for space-saving
Excellent thermal performance and wide operating temperature range
Very low on-resistance for efficient power delivery
Suitable for a wide range of applications with its versatile features
Meets industrial-grade quality and safety standards
Compatibility with various electronic devices and circuits
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