Manufacturer Part Number
FQD5P10TM
Manufacturer
onsemi
Introduction
High-performance P-channel MOSFET transistor suitable for power switching applications.
Product Features and Performance
Drain-Source Voltage (Vdss) of 100V
Continuous Drain Current (ID) of 3.6A at 25°C case temperature
Low On-Resistance (RDS(on)) of 1.05Ω at 10V gate-source voltage
Fast Switching Speeds
Wide Operating Temperature Range of -55°C to 150°C
Product Advantages
Excellent Power Handling Capability
Low Power Losses
Robust Design for Reliability
Compact TO-252 (D-Pak) Package
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (RDS(on)): 1.05Ω @ 1.8A, 10V
Continuous Drain Current (ID): 3.6A @ 25°C
Input Capacitance (Ciss): 250pF @ 25V
Power Dissipation: 2.5W @ 25°C (Ta), 25W @ 25°C (Tc)
Quality and Safety Features
RoHS3 Compliant
ESD Protection
Compatibility
Can be used as a replacement or upgrade for similar P-channel MOSFET transistors in power switching applications.
Application Areas
Power Supplies
Motor Drives
Lighting Control
Battery Chargers
Industrial Controls
Product Lifecycle
Currently in production. Replacement or upgrade options may be available from the manufacturer or third-party suppliers.
Several Key Reasons to Choose This Product
Excellent power handling capability with a high drain-source voltage and continuous drain current rating.
Low on-resistance for improved efficiency and reduced power losses.
Fast switching speeds for high-frequency power conversion applications.
Wide operating temperature range for use in diverse environments.
Compact and robust TO-252 (D-Pak) package for space-constrained designs.
RoHS3 compliance for use in environmentally-conscious applications.
