Manufacturer Part Number
FQD5N60CTM
Manufacturer
onsemi
Introduction
The FQD5N60CTM is a N-Channel MOSFET transistor designed for high-power, high-voltage applications.
Product Features and Performance
Operating temperature range: -55°C to 150°C
Drain-to-Source voltage (Vdss) of 600V
Maximum Gate-to-Source voltage (Vgs) of ±30V
On-resistance (Rds(on)) of 2.5Ω @ 1.4A, 10V
Continuous Drain Current (Id) of 2.8A at 25°C (Tc)
Input Capacitance (Ciss) of 670pF @ 25V
Maximum Power Dissipation of 2.5W (Ta), 49W (Tc)
Product Advantages
Robust design for high-power, high-voltage applications
Low on-resistance for improved efficiency
Wide operating temperature range
Compact TO-252AA package
Key Technical Parameters
MOSFET technology
N-Channel FET type
Threshold voltage (Vgs(th)) of 4V @ 250A
Gate Charge (Qg) of 19nC @ 10V
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Suitable for a variety of high-power, high-voltage applications
Application Areas
Switching power supplies
Motor drives
Industrial control systems
Automotive electronics
Product Lifecycle
This product is currently in production and available for purchase.
Replacements and upgrades may be available in the future.
Key Reasons to Choose This Product
Robust design for reliable performance in high-power, high-voltage applications
Low on-resistance for improved efficiency
Wide operating temperature range for versatile use
Compact TO-252AA package for space-constrained designs
RoHS3 compliance for environmental responsibility
