Manufacturer Part Number
FQD5N50CTM
Manufacturer
onsemi
Introduction
The FQD5N50CTM is a high-performance N-channel MOSFET transistor from onsemi, designed for a wide range of power switching and control applications.
Product Features and Performance
High breakdown voltage of 500V
Low on-state resistance (RDS(on)) of 1.4Ω at 2A, 10V
Continuous drain current (ID) of 4A at 25°C
Operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge (Qg) of 24nC at 10V
Product Advantages
Excellent power handling and efficiency
Reliable and rugged construction
Suitable for high-voltage, high-current applications
Simple drop-in replacement for similar MOSFET devices
Key Technical Parameters
Drain-Source Voltage (VDS): 500V
Gate-Source Voltage (VGS): ±30V
On-State Resistance (RDS(on)): 1.4Ω @ 2A, 10V
Continuous Drain Current (ID): 4A @ 25°C
Input Capacitance (Ciss): 625pF @ 25V
Power Dissipation (Pd): 2.5W @ Ta, 48W @ Tc
Quality and Safety Features
Robust TO-252AA (D-Pak) package
Meets relevant safety and reliability standards
RoHS-compliant and lead-free construction
Compatibility
The FQD5N50CTM is compatible with a wide range of power electronic circuits and systems, including switch-mode power supplies, motor drives, and industrial control applications.
Application Areas
Switching power supplies
Motor drives and controls
Inverters and converters
Industrial and automotive electronics
Product Lifecycle
The FQD5N50CTM is an active and widely available product from onsemi. There are no current plans for discontinuation, and it can be readily replaced or upgraded with similar MOSFET devices from onsemi's product portfolio.
Key Reasons to Choose This Product
Excellent power handling and efficiency
Reliable and rugged construction
Wide operating temperature range
Simple drop-in replacement for similar MOSFET devices
Competitive pricing and availability
FQD5N50CVBSEMI