Manufacturer Part Number
FQD5N60CTM
Manufacturer
Fairchild (onsemi)
Introduction
High-performance MOSFET with low on-resistance and high voltage rating.
Product Features and Performance
600V drain-source voltage rating
5Ω maximum on-resistance at 1.4A, 10V
8A continuous drain current at 25°C case temperature
670pF maximum input capacitance at 25V
5W maximum power dissipation at 25°C ambient temperature, 49W at 25°C case temperature
N-channel enhancement-mode MOSFET
Product Advantages
Excellent energy efficiency due to low on-resistance
High voltage and current handling capability
Compact TO-252 (D-Pak) surface-mount package
Key Technical Parameters
Drain-source voltage (Vdss): 600V
Maximum gate-source voltage (Vgs): ±30V
On-resistance (Rds(on)): 2.5Ω @ 1.4A, 10V
Continuous drain current (Id): 2.8A @ 25°C
Input capacitance (Ciss): 670pF @ 25V
Power dissipation: 2.5W @ 25°C, 49W @ 25°C
Quality and Safety Features
Designed and manufactured to high quality standards
Suitable for use in harsh environments (-55°C to 150°C)
Compatibility
Suitable for a wide range of power electronics and motor control applications
Application Areas
Switch-mode power supplies
Motor drives
Welding equipment
Industrial automation and control systems
Product Lifecycle
This product is an active, in-production device. No discontinuation or replacement plans have been announced.
Key Reasons to Choose This Product
Excellent energy efficiency and low power losses due to low on-resistance
High voltage and current handling capability for demanding applications
Compact surface-mount package for space-constrained designs
Reliable operation in harsh environmental conditions (-55°C to 150°C)
Widespread compatibility and suitability for a variety of power electronics applications
