Manufacturer Part Number
FQD5P20TM
Manufacturer
onsemi
Introduction
A single P-channel MOSFET transistor
Product Features and Performance
MOSFET (Metal Oxide) technology
Drain to Source Voltage (Vdss) of 200 V
Maximum Gate-Source Voltage (Vgs) of ±30 V
On-State Resistance (Rds(on)) of 1.4 Ω @ 1.85 A, 10 V
Continuous Drain Current (Id) of 3.7 A @ 25°C (Tc)
Input Capacitance (Ciss) of 430 pF @ 25 V
Power Dissipation of 2.5 W (Ta), 45 W (Tc)
Operating Temperature range of -55°C to 150°C (TJ)
Product Advantages
High voltage rating
Low on-state resistance
Compact surface mount package
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Threshold Voltage (Vgs(th)) of 5 V @ 250 A
Drive Voltage (Max Rds On, Min Rds On) of 10 V
Gate Charge (Qg) of 13 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Compatibility
TO-252-3, DPak (2 Leads + Tab), SC-63 package
Application Areas
Switch mode power supplies
Motor drives
Lighting ballasts
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacement or upgraded products may be available in the future
Key Reasons to Choose This Product
High voltage rating for industrial and high-power applications
Low on-state resistance for efficient power switching
Compact surface mount package for space-constrained designs
RoHS3 compliance for environmentally-friendly applications
