Manufacturer Part Number
FQD4P40TM
Manufacturer
onsemi
Introduction
The FQD4P40TM is a P-Channel Enhancement-Mode Field-Effect Transistor (FET) in a TO-252 package, suitable for power switching and control applications.
Product Features and Performance
Drain-to-Source Voltage (VDS) up to 400V
On-State Resistance (RDS(on)) as low as 3.1Ω
Continuous Drain Current (ID) up to 2.7A
Operating Temperature Range: -55°C to 150°C
Fast switching speed and low gate charge
Product Advantages
High voltage handling capability
Low on-state resistance for efficient power conversion
Wide operating temperature range
Compact and thermally efficient TO-252 package
Key Technical Parameters
Drain-to-Source Voltage (VDS): 400V
Gate-to-Source Voltage (VGS): ±30V
On-State Resistance (RDS(on)): 3.1Ω
Continuous Drain Current (ID): 2.7A
Input Capacitance (Ciss): 680pF
Power Dissipation (PD): 2.5W (Ta), 50W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for safety-critical applications
Compatibility
Compatible with standard MOSFET gate drive circuits
Application Areas
Power switching and control in a variety of industrial, automotive, and consumer electronics applications
Product Lifecycle
This product is currently in production and there are no plans for discontinuation.
Replacement or upgrade options are available from the manufacturer.
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-state resistance for efficient power conversion
Wide operating temperature range for diverse applications
Compact and thermally efficient TO-252 package
RoHS3 compliance for use in regulated environments
Compatibility with standard MOSFET gate drive circuits
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