Manufacturer Part Number
FQD5N15TF
Manufacturer
onsemi
Introduction
This is a discrete N-channel MOSFET transistor from onsemi's QFET series, designed for power switching and amplification applications.
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 150 V
Wide operating temperature range of -55°C to 150°C
Low on-resistance (Rds(on)) of 800 mΩ at 2.15 A, 10 V
Continuous Drain Current (Id) of 4.3 A at 25°C case temperature
Input Capacitance (Ciss) of 230 pF at 25 V
Power Dissipation of 2.5 W at 25°C ambient temperature, 30 W at 25°C case temperature
Product Advantages
Efficient power switching and amplification capabilities
Suitable for a wide range of operating temperatures
Low on-resistance for reduced power losses
High-voltage handling capability
Key Technical Parameters
Vdss: 150 V
Vgs (Max): ±25 V
Rds On (Max) @ Id, Vgs: 800 mΩ @ 2.15 A, 10 V
Id (Continuous) @ 25°C: 4.3 A
Ciss (Max) @ Vds: 230 pF @ 25 V
Power Dissipation (Max): 2.5 W (Ta), 30 W (Tc)
Quality and Safety Features
MOSFET technology for reliable and efficient operation
Tested and qualified to meet industry standards
Compatibility
Suitable for a variety of power electronics and control applications
Application Areas
Power switching and amplification circuits
Motor control
Power supplies
Inverters and converters
Product Lifecycle
This product is currently in active production and availability.
Replacement or upgrade options may be available from onsemi.
Key Reasons to Choose This Product
Efficient power switching and amplification capabilities
Wide operating temperature range for versatile applications
Low on-resistance for reduced power losses and improved efficiency
High-voltage handling capability for various power electronics designs
Reliable MOSFET technology and industry-standard quality assurance
