Manufacturer Part Number
FQD4P25TM-WS
Manufacturer
onsemi
Introduction
High-performance P-channel power MOSFET
Product Features and Performance
Robust, rugged MOSFET construction
Low on-resistance (RDS(on)) for high efficiency
Fast switching speed for high-frequency applications
Low input capacitance (Ciss) for high-speed operation
High drain-source breakdown voltage (VDSS) of 250V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power handling capability
High efficiency and low power loss
Suitable for high-frequency switching applications
Wide range of operating conditions
Key Technical Parameters
Drain-Source Voltage (VDSS): 250V
Gate-Source Voltage (VGS): ±30V
On-Resistance (RDS(on)): 2.1Ω @ 1.55A, 10V
Continuous Drain Current (ID): 3.1A @ 25°C
Input Capacitance (Ciss): 420pF @ 25V
Power Dissipation (PD): 2.5W (Ta), 45W (Tc)
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Compatible with various electronic circuit designs and applications
Application Areas
Switching power supplies
Motor drives
Industrial controls
Automotive electronics
Product Lifecycle
Current and available for purchase
Replacement or upgrade options may be available
Key Reasons to Choose
Excellent power handling and efficiency
Fast switching speed for high-frequency operation
Wide operating temperature range
Robust and reliable construction
Suitable for a variety of power electronics applications
FQD4P25FSC