Manufacturer Part Number
FQD4P25TM
Manufacturer
onsemi
Introduction
This product is a P-Channel MOSFET transistor from onsemi, part of the QFET series.
Product Features and Performance
Drain to Source Voltage (Vdss) of 250V
Vgs (Max) of ±30V
Low On-Resistance (Rds On) of 2.1Ω @ 1.55A, 10V
Continuous Drain Current (Id) of 3.1A at 25°C (Tc)
Input Capacitance (Ciss) of 420pF @ 25V
Power Dissipation of 2.5W (Ta), 45W (Tc)
Operating Temperature Range of -55°C to 150°C (TJ)
Product Advantages
High voltage handling capability
Low on-resistance for efficient power transfer
Surface mount package for compact design
Key Technical Parameters
MOSFET Technology
P-Channel FET Type
Vgs(th) of 5V @ 250A
Gate Charge (Qg) of 14nC @ 10V
Quality and Safety Features
Robust TO-252AA package
Suitable for high temperature operation
Compatibility
This MOSFET is suitable for a wide range of power electronics and control applications.
Application Areas
Switch Mode Power Supplies
Motor Drives
Industrial Controls
Lighting Applications
Product Lifecycle
This product is currently in active production and available for purchase. Replacement or upgrade options may be available in the future.
Key Reasons to Choose This Product
High voltage handling and low on-resistance for efficient power conversion
Compact surface mount package for space-constrained designs
Wide operating temperature range for reliable operation in harsh environments
Proven MOSFET technology from a reputable manufacturer
FQD4P25FSC