FJD5555TM - onsemi

Manufacturer Part Number

FJD5555TM

Manufacturer

onsemi

Introduction

High-voltage bipolar junction transistor (BJT) in a TO-252 package.

Product Features and Performance

Voltage Collector Emitter Breakdown (Max): 400 V

Current Collector (Ic) (Max): 5 A

Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 3.5A

DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 800mA, 3V

Power Max: 1.34 W

Operating Temperature: 150°C (TJ)

Product Advantages

High voltage and current handling capabilities

Compact TO-252 surface mount package

Suitable for high-power switching and amplifier applications

Key Technical Parameters

Transistor Type: NPN

Mounting Type: Surface Mount

Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Quality and Safety Features

RoHS3 Compliant

Compatibility

Supplier Device Package: TO-252AA

Application Areas

High-power switching and amplifier circuits

Industrial and automotive electronics

Power supplies and motor control

Product Lifecycle

Currently available, no indication of discontinuation.

Replacements and upgrades may be available from onsemi.

Key Reasons to Choose This Product

High voltage and current ratings for demanding applications

Compact surface mount package for efficient board design

RoHS compliance for environmental responsibility

Broad industrial and automotive applications