Manufacturer Part Number
FJD5304DTF
Manufacturer
onsemi
Introduction
The FJD5304DTF is a high-power NPN bipolar junction transistor (BJT) designed for use in various power switching and amplification applications.
Product Features and Performance
High voltage capability of up to 400V Collector-Emitter Breakdown Voltage
High current handling capacity of up to 4A Collector Current
Low Collector-Emitter Saturation Voltage (VCE(sat)) of 1.5V @ 500mA, 2.5A
Broad operating temperature range up to 150°C junction temperature
Product Advantages
Excellent power handling capabilities
High voltage and current ratings
Low on-state resistance for efficient power switching
Suitable for high-power applications
Key Technical Parameters
Power Rating: 30W
Voltage Collector Emitter Breakdown (Max): 400V
Current Collector (Ic) (Max): 4A
Current Collector Cutoff (Max): 100A
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature applications
Compatibility
TO-252-3, DPak (2 Leads + Tab), SC-63 package
Surface mount configuration
Application Areas
Power supplies
Motor drives
Switching regulators
Amplifiers
High-power switching applications
Product Lifecycle
This product is currently in active production and is not nearing discontinuation.
Replacement or upgraded options may be available in the future as technology evolves.
Several Key Reasons to Choose This Product
Excellent power handling capabilities with high voltage and current ratings
Low on-state resistance for efficient power switching
Suitable for high-temperature and high-power applications
RoHS3 compliance for environmental and safety considerations
Surface mount configuration for easy integration into electronic designs