Manufacturer Part Number
FGAF40N60SMD
Manufacturer
onsemi
Introduction
High-power IGBT transistor with fast switching and high efficiency for industrial applications.
Product Features and Performance
Field-stop IGBT technology for fast switching and low conduction losses
High current handling capability up to 80A
600V collector-emitter breakdown voltage
Low on-state voltage drop of 1.9V at 40A
Fast reverse recovery time of 36ns
Gate charge of 119nC for efficient switching
High pulsed current rating up to 120A
Operating temperature range of -55°C to 175°C
Product Advantages
Improved energy efficiency and reduced power dissipation
Compact and robust design for industrial applications
Reliable performance in harsh environments
Key Technical Parameters
Collector-Emitter Voltage (Vces): 600V
Collector Current (Ic): 80A
Collector-Emitter Saturation Voltage (Vce(on)): 1.9V
Reverse Recovery Time (trr): 36ns
Gate Charge (Qg): 119nC
Quality and Safety Features
RoHS3 compliant
TO-3PF package for efficient heat dissipation
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of industrial applications, including motor drives, power supplies, and inverters.
Application Areas
Industrial motor drives
Power converters and inverters
Welding equipment
Uninterruptible power supplies (UPS)
Induction heating systems
Product Lifecycle
The FGAF40N60SMD is a current production part and is not nearing discontinuation. Replacement or upgrade options may be available from onsemi.
Key Reasons to Choose This Product
Excellent performance and efficiency due to field-stop IGBT technology
High current and voltage handling capability for demanding applications
Fast switching and low conduction losses for improved system efficiency
Robust and reliable design for industrial environments
Compatibility with a wide range of industrial applications