Manufacturer Part Number
FGAF20N60SMD
Manufacturer
onsemi
Introduction
High-performance single IGBT transistor
Product Features and Performance
Field stop IGBT technology
High power density and efficiency
Low on-state voltage drop
Low switching losses
High speed and fast switching
Product Advantages
Optimized for high-frequency, high-power switching applications
Excellent thermal cycling capability
Reliable and robust design
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600 V
Current Collector (Ic) (Max): 40 A
Vce(on) (Max) @ Vge, Ic: 1.7 V @ 15 V, 20 A
Reverse Recovery Time (trr): 26.7 ns
Gate Charge: 64 nC
Current Collector Pulsed (Icm): 60 A
Switching Energy: 452 J (on), 141 J (off)
Td (on/off) @ 25°C: 12 ns/91 ns
Quality and Safety Features
RoHS compliant
Suitable for high-temperature operation (-55°C to 175°C)
Compatibility
Through-hole TO-3PF package
Application Areas
High-frequency, high-power switching applications
Industrial motor drives
Welding equipment
Uninterruptible power supplies (UPS)
Induction heating
Solar inverters
Product Lifecycle
Current product, no discontinuation or replacement plans
Several Key Reasons to Choose This Product
Optimized for high-frequency, high-power switching applications
Excellent thermal cycling capability
Reliable and robust design
Fast switching and low switching losses
Suitable for high-temperature operation