Manufacturer Part Number
FGAF40N60UFDTU
Manufacturer
Fairchild (onsemi)
Introduction
This is a discrete semiconductor product, specifically a single Insulated Gate Bipolar Transistor (IGBT) in a TO-3PF package.
Product Features and Performance
Operating Temperature Range: -55°C to 150°C (TJ)
Power Rating: 100 W
Collector-Emitter Breakdown Voltage: 600 V
Collector Current (Max): 40 A
Collector-Emitter Saturation Voltage (Max): 3 V @ 15 V, 20 A
Reverse Recovery Time: 95 ns
Gate Charge: 77 nC
Pulsed Collector Current (Max): 160 A
Switching Energy: 470 μJ (on), 130 μJ (off)
Turn-on/off Delay Time: 15 ns / 65 ns
Product Advantages
High voltage and current handling capabilities
Fast switching speed
Low conduction and switching losses
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 600 V
Collector Current (Max): 40 A
Collector-Emitter Saturation Voltage (Max): 3 V
Reverse Recovery Time: 95 ns
Gate Charge: 77 nC
Pulsed Collector Current (Max): 160 A
Switching Energy: 470 μJ (on), 130 μJ (off)
Turn-on/off Delay Time: 15 ns / 65 ns
Quality and Safety Features
Operating Temperature Range: -55°C to 150°C (TJ)
Robust TO-3PF package
Compatibility
This IGBT is designed for use in a wide range of power electronic applications.
Application Areas
Power supplies
Motor drives
Inverters
Welding equipment
Induction heating
Uninterruptible power supplies (UPS)
Product Lifecycle
This product is currently in production and readily available.
There are no plans for discontinuation, and replacement options are available if needed.
Key Reasons to Choose This Product
High voltage and current handling capabilities
Fast switching speed for improved efficiency
Low conduction and switching losses for better performance
Robust TO-3PF package for reliable operation
Widely compatible with various power electronic applications
FGA70N33BTDLDTUFairchild (onsemi)