Manufacturer Part Number
FGA40T65SHD
Manufacturer
onsemi
Introduction
High-power, fast-switching insulated gate bipolar transistor (IGBT) for industrial and power electronics applications
Product Features and Performance
Trench field stop IGBT technology
Low conduction and switching losses
Fast switching speed with low gate charge
High current capability up to 80A
High voltage rating up to 650V
Wide operating temperature range of -55°C to 175°C
Product Advantages
Excellent thermal performance and reliability
Optimized for high-efficiency power conversion
Suitable for various industrial and power electronics applications
Key Technical Parameters
Collector-Emitter Voltage (VCE,max): 650V
Collector Current (IC,max): 80A
Collector-Emitter Saturation Voltage (VCE(on),max): 2.1V
Reverse Recovery Time (trr): 31.8ns
Gate Charge (Qg): 72.2nC
Quality and Safety Features
ROHS3 compliant
TO-3P-3 package with high thermal performance
Compatibility
Compatible with standard IGBT gate driver circuits
Application Areas
Inverters
Converters
Motor drives
Power supplies
Welding equipment
Induction heating
Other industrial and power electronics applications
Product Lifecycle
Current production with no known discontinuation
Several Key Reasons to Choose This Product
High power and current handling capabilities
Fast switching speed and low switching losses
Excellent thermal performance and reliability
Wide operating temperature range
Compatibility with standard IGBT gate driver circuits
Suitability for a wide range of industrial and power electronics applications