FGA50N100BNTD2 - onsemi

Manufacturer Part Number

FGA50N100BNTD2

Manufacturer

onsemi

Introduction

High-power IGBT (Insulated Gate Bipolar Transistor) for industrial and power supply applications

Product Features and Performance

NPT (Non-Punch-Through) and Trench IGBT technology

High voltage rating up to 1000V

High current rating up to 50A continuous, 200A pulsed

Low on-state voltage (Vce(on)) of 2.9V @ 15V, 60A

Fast switching with turn-on/off times of 34ns/243ns

Low gate charge of 257nC for efficient switching

Wide operating temperature range of -55°C to 150°C

Product Advantages

Robust and reliable performance

Efficient power conversion

Compact and space-saving design

Suitable for high-power industrial applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCES): 1000V

Collector Current (IC): 50A continuous, 200A pulsed

Gate Charge (Qg): 257nC

Reverse Recovery Time (trr): 75ns

Operating Temperature Range: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Manufactured in an ISO-certified facility

Designed and tested to meet industry standards

Compatibility

Suitable for a wide range of industrial power electronics applications

Application Areas

Motor drives

Power supplies

Inverters

Uninterruptible Power Supplies (UPS)

Welding equipment

Industrial automation and control systems

Product Lifecycle

Currently in active production

Replacement or upgrade options available upon request

Key Reasons to Choose This Product

Reliable and robust performance in high-power applications

Efficient power conversion with low on-state voltage and fast switching

Compact and space-saving design for easy integration

Wide operating temperature range for versatile use

RoHS3 compliance for environmentally-friendly applications