Manufacturer Part Number
FGA40N65SMD
Manufacturer
onsemi
Introduction
High-power insulated-gate bipolar transistor (IGBT) for industrial and power supply applications
Product Features and Performance
Field stop IGBT technology
Low Vce(on) of 2.5V @ 15V, 40A
Fast reverse recovery time of 42ns
High collector current rating of 80A
Wide operating temperature range of -55°C to 175°C
Product Advantages
Excellent efficiency and power density
Robust design for reliable operation
Optimized switching performance
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 650V
Collector Current (Max): 80A
Collector Current Pulsed (Max): 120A
Gate Charge: 119nC
Switching Energy: 820J (on), 260J (off)
Switching Times (Td on/off): 12ns/92ns
Quality and Safety Features
RoHS3 compliant
TO-3PN package for effective heat dissipation
Compatibility
Suitable for industrial and power supply applications
Application Areas
Motor drives
Welding equipment
Uninterruptible power supplies (UPS)
Induction heating
Solar inverters
Product Lifecycle
Current production model
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High-performance IGBT with excellent efficiency and reliability
Optimized switching characteristics for improved system efficiency
Wide operating temperature range for diverse applications
Robust design and safety features for reliable operation