Manufacturer Part Number
FGA30S120P
Manufacturer
Fairchild (onsemi)
Introduction
The FGA30S120P is a high-performance single Insulated Gate Bipolar Transistor (IGBT) from Fairchild (onsemi), a leading manufacturer of power semiconductor devices.
Product Features and Performance
Trench Field Stop IGBT design for high efficiency and low conduction losses
Capable of handling up to 60A of continuous collector current and 150A of pulsed current
Breakdown voltage of 1300V for high voltage applications
Low on-state voltage of 2.3V @ 15V gate and 30A collector current
Gate charge of 78nC for fast and efficient switching
Operating temperature range of -55°C to 175°C
Product Advantages
Excellent performance and efficiency for high power applications
Robust design with high voltage and current capabilities
Compact TO-3P-3 package with good thermal dissipation
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 1300V
Collector Current (Max): 60A
Collector Current, Pulsed (Max): 150A
On-state Voltage (Max): 2.3V @ 15V, 30A
Gate Charge: 78nC
Quality and Safety Features
Compliance with relevant safety and quality standards
Robust design for reliable operation in challenging environments
Compatibility
Suitable for a wide range of industrial, automotive, and power electronics applications
Application Areas
Motor drives
Power supplies
Inverters
Welding equipment
Industrial automation and control systems
Product Lifecycle
This product is currently in production and is not nearing discontinuation
Replacements and upgrades may be available in the future as technology advances
Key Reasons to Choose This Product
Excellent performance and efficiency for high power applications
Robust and reliable design with high voltage and current capabilities
Compact and thermally efficient package
Widely compatible with various industrial and power electronics applications
Ongoing availability and potential for future replacements or upgrades
