FFSB10120A - onsemi

Manufacturer Part Number

FFSB10120A

Manufacturer

onsemi

Introduction

High-performance Silicon Carbide (SiC) Schottky diode

Suitable for power factor correction (PFC), DC/DC converters, and other high-frequency power conversion applications

Product Features and Performance

Extremely fast reverse recovery time (trr = 0 ns)

Low forward voltage drop (Vf = 1.75 V @ 10 A)

High reverse voltage rating (Vr = 1200 V)

High current handling capability (Io = 21 A)

Wide operating temperature range (-55°C to 175°C)

Low parasitic capacitance (612 pF @ 1 V, 100 kHz)

Product Advantages

Improved energy efficiency in power conversion systems

Reduced switching losses and EMI

Compact and lightweight design

Key Technical Parameters

Manufacturer Part Number: FFSB10120A

Voltage DC Reverse (Vr) (Max): 1200 V

Current Average Rectified (Io): 21 A

Voltage Forward (Vf) (Max) @ If: 1.75 V @ 10 A

Reverse Recovery Time (trr): 0 ns

Capacitance @ Vr, F: 612 pF @ 1 V, 100 kHz

Operating Temperature Junction: -55°C to 175°C

Quality and Safety Features

RoHS3 compliant

Reliable and durable DPAK-3 (TO-263-3) package

Compatibility

Suitable for a wide range of power conversion applications, including power factor correction (PFC), DC/DC converters, and other high-frequency power conversion circuits

Application Areas

Power supplies

Inverters

Motor drives

Renewable energy systems

Industrial electronics

Product Lifecycle

Current production part

Replacement and upgrade options available

Key Reasons to Choose This Product

Exceptional energy efficiency and reduced switching losses

Compact and lightweight design for space-constrained applications

Reliable and durable SiC technology

Wide operating temperature range for harsh environments

Compatibility with a variety of power conversion applications