Manufacturer Part Number
FFSP1065A
Manufacturer
onsemi
Introduction
Silicon Carbide (SiC) Schottky Diode, designed for high-efficiency power conversion applications.
Product Features and Performance
Very low forward voltage drop
Ultra-fast reverse recovery time of 0 ns
High avalanche energy rating
High surge current capability
Operate at junction temperatures up to 175°C
Product Advantages
Improved efficiency in power conversion systems
Reduced power losses
Compact design and simplified cooling requirements
Enhanced reliability and extended lifetime
Key Technical Parameters
Reverse Voltage: 650V
Forward Current: 15A
Forward Voltage Drop: 1.75V @ 10A
Reverse Leakage Current: 200μA @ 650V
Operating Temperature: -55°C to 175°C
Capacitance: 575pF @ 1V, 100kHz
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Suitable for a wide range of power electronics applications, including power supplies, motor drives, and renewable energy systems.
Application Areas
High-efficiency power conversion
Industrial and consumer electronics
Renewable energy systems
Electric vehicles and charging infrastructure
Product Lifecycle
The FFSP1065A is an active and currently available product. Replacement or upgrade options may be available from onsemi.
Key Reasons to Choose This Product
Exceptional energy efficiency and low losses
High-temperature operation and reliability
Compact design and simplified cooling requirements
Proven performance in demanding power electronics applications