Manufacturer Part Number
FFSD1065A
Manufacturer
onsemi
Introduction
This is a high-performance SiC (Silicon Carbide) Schottky diode with a Manufacturer Part Number of FFSD1065A.
Product Features and Performance
Extremely low reverse recovery time of 0 ns
Very low forward voltage drop of 1.75 V @ 10 A
High reverse voltage rating of 650 V
High average rectified current capability of 18 A
Wide operating temperature range of -55°C to 175°C
Product Advantages
Superior switching performance compared to traditional silicon diodes
Reduced power losses and increased energy efficiency
Compact and space-saving D-PAK (TO-252) package
Key Technical Parameters
Reverse Leakage Current: 200 μA @ 650 V
Capacitance: 575 pF @ 1 V, 100 kHz
No reverse recovery time > 500 mA (Io)
Quality and Safety Features
RoHS3 compliant
Reliable and durable performance
Compatibility
This SiC Schottky diode is suitable for a wide range of power electronics applications.
Application Areas
Switch-mode power supplies
Power factor correction circuits
Motor drives
Renewable energy systems
Industrial and automotive electronics
Product Lifecycle
The FFSD1065A is an actively supported product and there are no plans for discontinuation. Upgrades and replacements may be available in the future.
Key Reasons to Choose This Product
Exceptional switching performance and efficiency
High voltage and current handling capabilities
Wide operating temperature range
Compact and space-saving package
Reliable and RoHS3 compliant design