FFSH20120ADN-F155 - onsemi

Manufacturer Part Number

FFSH20120ADN-F155

Manufacturer

onsemi

Introduction

High-performance Silicon Carbide (SiC) Schottky Diode

Product Features and Performance

Fast recovery time of less than 500 ns

High reverse voltage rating of 1200 V

High average rectified current per diode of 10 A (DC)

Wide operating temperature range of -55°C to 175°C

Low forward voltage drop of 1.75 V at 10 A

Product Advantages

Improved energy efficiency compared to traditional silicon diodes

Reduced switching losses and heat generation

Compact and robust design for reliable operation

Key Technical Parameters

Reverse Leakage Current: 200 A @ 1200 V

Forward Voltage: 1.75 V @ 10 A

Diode Configuration: 1 Pair Common Cathode

Mounting Type: Through Hole

Quality and Safety Features

RoHS3 compliant

Packaged in a TO-247-3 case

Compatibility

Suitable for a variety of power conversion, switching, and rectification applications

Application Areas

Power supplies

Motor drives

Inverters

Renewable energy systems

Industrial equipment

Product Lifecycle

This product is currently in production and is not nearing discontinuation. Replacement or upgrade options may be available from the manufacturer.

Key Reasons to Choose This Product

Excellent performance and energy efficiency due to SiC technology

Robust design and wide operating temperature range

Compact and easy to integrate into various applications

Reliable and long-lasting operation