Manufacturer Part Number
FDMT80080DC
Manufacturer
onsemi
Introduction
The FDMT80080DC is a high-performance N-Channel MOSFET transistor from onsemi, suitable for a wide range of power management and switching applications.
Product Features and Performance
N-Channel MOSFET design
80V drain-to-source voltage rating
Low on-resistance of 1.35mOhm @ 36A, 10V
High continuous drain current of 36A at 25°C ambient, 254A at 25°C case
Fast switching with low gate charge of 273nC @ 10V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power density and efficiency
Robust and reliable performance
Suitable for high-power, high-frequency applications
Compact 8-PowerVDFN package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 80V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 1.35mOhm @ 36A, 10V
Continuous Drain Current (Id): 36A (Ta), 254A (Tc)
Input Capacitance (Ciss): 20720pF @ 40V
Power Dissipation: 3.2W (Ta), 156W (Tc)
Quality and Safety Features
RoHS3 compliant
Reliable and durable design
Compatibility
Suitable for a wide range of power management and switching applications
Application Areas
Power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Current product, no discontinuation planned
Replacements and upgrades available as technology advances
Several Key Reasons to Choose This Product
Excellent power handling and efficiency
Compact and reliable 8-PowerVDFN package
Wide operating temperature range
Robust and durable performance
Suitable for high-power, high-frequency applications
