Manufacturer Part Number
FDMT800100DC
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET with low on-resistance and high current capability.
Product Features and Performance
Low on-resistance (RDS(on)) of 2.95 mΩ @ 24 A, 10 V
Continuous drain current (ID) of 24 A (Ta), 162 A (Tc)
High input capacitance (Ciss) of 7835 pF @ 50 V
Maximum power dissipation of 3.2 W (Ta), 156 W (Tc)
Threshold voltage (Vgs(th)) of 4 V @ 250 A
Gate charge (Qg) of 111 nC @ 10 V
Product Advantages
Excellent thermal efficiency with Dual Cool88 package
Efficient power switching and low conduction losses
Suitable for high-current, high-power applications
Key Technical Parameters
Drain-to-Source Voltage (VDS): 100 V
Gate-to-Source Voltage (VGS): ±20 V
Operating Temperature: -55°C to 150°C (TJ)
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Compatible with a wide range of high-power electronic systems and applications.
Application Areas
Switching power supplies
Motor drives
Industrial automation
Renewable energy systems
Product Lifecycle
This product is currently available and not nearing discontinuation. Replacements and upgrades may be available in the future.
Key Reasons to Choose This Product
Exceptional performance with low on-resistance and high current capability
Efficient thermal management with Dual Cool88 package
Reliable and safe operation for high-power applications
Compatibility with a wide range of electronic systems and applications