Manufacturer Part Number
FDMT80060DC
Manufacturer
onsemi
Introduction
High power N-channel MOSFET with low on-resistance and high current capability
Product Features and Performance
Low on-resistance for high efficiency
High current handling capability up to 43A (Ta) and 292A (Tc)
Low gate charge for high-speed switching
Suitable for high-power, high-frequency applications
Robust PowerTrench MOSFET technology
Product Advantages
Excellent thermal performance
Optimized for high power density designs
Superior switching performance
Reliable and robust design
Key Technical Parameters
Drain to Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 1.1mΩ @ 43A, 10V
Continuous Drain Current (Id): 43A (Ta), 292A (Tc)
Input Capacitance (Ciss): 20170pF @ 30V
Power Dissipation: 3.2W (Ta), 156W (Tc)
Quality and Safety Features
RoHS3 compliant
Dual Cool88 package for improved thermal performance
Designed for high reliability and long lifespan
Compatibility
Suitable for a wide range of high-power, high-frequency applications such as power supplies, motor drives, and industrial equipment
Application Areas
Power supplies
Motor drives
Industrial equipment
Telecom and server power
Electric vehicles
Product Lifecycle
Current product
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent thermal performance and high current capability
Low on-resistance for high efficiency
Robust and reliable design
Optimized for high power density applications
Superior switching performance for high-frequency operation
FDMS8888Fairchild SemiconductorMOSFET N-CH 30V 13.5A/21A 8PQFN