Manufacturer Part Number
FDMT800120DC
Manufacturer
onsemi
Introduction
High-performance N-Channel MOSFET transistor designed for power conversion and control applications.
Product Features and Performance
Operates at high voltages up to 120V
Supports high continuous drain current of up to 20A (at 25°C) and 129A (at 100°C)
Low on-resistance of 4.14mΩ maximizes efficiency
Fast switching speed with low gate charge of 107nC
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power handling capability
High efficiency due to low on-resistance
Reliable operation across wide temperature range
Compact surface mount package
Key Technical Parameters
Drain-Source Voltage (Vdss): 120V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 4.14mΩ @ 20A, 10V
Continuous Drain Current (Id): 20A (at 25°C), 129A (at 100°C)
Input Capacitance (Ciss): 7850pF @ 60V
Power Dissipation (Pd): 3.2W (at 25°C), 156W (at 100°C)
Quality and Safety Features
ROHS3 compliant
Meets stringent quality and reliability standards
Compatibility
Suitable for use in a wide range of power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Electric vehicle systems
Industrial automation and control
Product Lifecycle
Current production model, no discontinuation planned
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Excellent power handling and efficiency
Reliable operation across wide temperature range
Compact and space-saving surface mount package
Meets strict quality and safety requirements
Compatibility with a wide range of applications