Manufacturer Part Number
FDME1024NZT
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Arrays
Product Features and Performance
PowerTrench series
2 N-Channel (Dual) configuration
MOSFET (Metal Oxide) technology
Logic Level Gate
Drain to Source Voltage (Vdss) of 20V
RDS(on) (Max) of 66mOhm @ 3.4A, 4.5V
Continuous Drain Current (ID) of 3.8A at 25°C
Input Capacitance (Ciss) of 300pF @ 10V
Gate Charge (Qg) of 4.2nC @ 4.5V
Operating Temperature range of -55°C to 150°C
Product Advantages
Compact 6-MicroFET (1.6x1.6) package
Surface mount design
Supports high power density applications
Key Technical Parameters
Power Max: 600mW
Vgs(th) (Max) @ Id: 1V @ 250A
Quality and Safety Features
RoHS3 Compliant
Compatibility
Tape & Reel (TR) packaging
Application Areas
Suitable for high power density applications
Product Lifecycle
Currently available, no plans for discontinuation
Key Reasons to Choose This Product
Compact, surface mount package
Capable of handling high power density
Wide operating temperature range
RoHS3 compliant for environmental safety
