FDMD8560L - onsemi

Manufacturer Part Number

FDMD8560L

Manufacturer

onsemi

Introduction

High power density, low on-resistance N-channel power MOSFET

Designed for high-frequency, high-efficiency power conversion applications

Product Features and Performance

PowerTrench® structure for low on-resistance and high power density

Very low gate charge and input capacitance for high efficiency

High-speed switching performance

Excellent thermal characteristics

Product Advantages

High power density

Ultra-low on-resistance

Low gate charge and input capacitance

Efficient high-frequency operation

Excellent thermal performance

Key Technical Parameters

Drain to Source Voltage (Vdss): 60V

On-Resistance (Rds(on)): 3.2mΩ @ 22A, 10V

Continuous Drain Current (Id): 22A @ 25°C, 93A

Input Capacitance (Ciss): 11130pF @ 30V

Gate Threshold Voltage (Vgs(th)): 3V @ 250A

Gate Charge (Qg): 128nC @ 10V

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability applications

Compatibility

Compatible with a wide range of power conversion and motor control applications

Application Areas

High-frequency, high-efficiency power conversion

Motor control

Switching power supplies

Industrial and consumer electronics

Product Lifecycle

This product is currently in active production and is not nearing discontinuation.

Replacement or upgrade options may be available from onsemi.

Key Reasons to Choose This Product

Exceptional power density and efficiency

Ultra-low on-resistance for minimal power loss

Fast, high-frequency switching performance

Excellent thermal management capabilities

Proven reliability and quality for demanding applications