Manufacturer Part Number
FDMD8540L
Manufacturer
onsemi
Introduction
High-performance power MOSFET transistor designed for a wide range of power conversion and control applications
Product Features and Performance
Low on-state resistance (R_DS(on)) of 1.5 mΩ
High drain current rating of 33 A at 25°C
Low input capacitance (C_iss) of 7,940 pF
Low gate charge (Q_g) of 113 nC
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent efficiency and power density
Robust and reliable performance
Suitable for high-current, high-switching frequency applications
Key Technical Parameters
Drain-to-Source Voltage (V_DS): 40 V
Threshold Voltage (V_GS(th)): 3 V
On-State Resistance (R_DS(on)): 1.5 mΩ
Drain Current (I_D): 33 A (continuous), 156 A (pulsed)
Input Capacitance (C_iss): 7,940 pF
Gate Charge (Q_g): 113 nC
Quality and Safety Features
RoHS3 compliant
Suitable for safety-critical applications
Compatibility
Compatible with various power conversion and control systems
Application Areas
Switching power supplies
Motor drives
Industrial automation equipment
Automotive electronics
Product Lifecycle
Currently in production
Replacement or upgrade options available
Key Reasons to Choose This Product
Excellent efficiency and power density for high-performance applications
Robust and reliable performance across a wide temperature range
Suitable for high-current, high-switching frequency applications
Low on-state resistance and gate charge for improved system efficiency
RoHS3 compliance for use in safety-critical applications
