FDMD8540L - onsemi

Manufacturer Part Number

FDMD8540L

Manufacturer

onsemi

Introduction

High-performance power MOSFET transistor designed for a wide range of power conversion and control applications

Product Features and Performance

Low on-state resistance (R_DS(on)) of 1.5 mΩ

High drain current rating of 33 A at 25°C

Low input capacitance (C_iss) of 7,940 pF

Low gate charge (Q_g) of 113 nC

Wide operating temperature range of -55°C to 150°C

Product Advantages

Excellent efficiency and power density

Robust and reliable performance

Suitable for high-current, high-switching frequency applications

Key Technical Parameters

Drain-to-Source Voltage (V_DS): 40 V

Threshold Voltage (V_GS(th)): 3 V

On-State Resistance (R_DS(on)): 1.5 mΩ

Drain Current (I_D): 33 A (continuous), 156 A (pulsed)

Input Capacitance (C_iss): 7,940 pF

Gate Charge (Q_g): 113 nC

Quality and Safety Features

RoHS3 compliant

Suitable for safety-critical applications

Compatibility

Compatible with various power conversion and control systems

Application Areas

Switching power supplies

Motor drives

Industrial automation equipment

Automotive electronics

Product Lifecycle

Currently in production

Replacement or upgrade options available

Key Reasons to Choose This Product

Excellent efficiency and power density for high-performance applications

Robust and reliable performance across a wide temperature range

Suitable for high-current, high-switching frequency applications

Low on-state resistance and gate charge for improved system efficiency

RoHS3 compliance for use in safety-critical applications