Manufacturer Part Number
FDMD8240LET40
Manufacturer
onsemi
Introduction
The FDMD8240LET40 is a dual N-channel MOSFET power transistor from onsemi.
Product Features and Performance
50W power rating
40V drain-to-source voltage
6mΩ maximum on-resistance at 23A and 10V gate-to-source voltage
24A continuous drain current at 25°C
4230pF maximum input capacitance at 20V
3V maximum gate threshold voltage at 250μA
56nC maximum gate charge at 10V
Product Advantages
High power density
Low on-resistance for efficient power conversion
Suitable for high-current applications
Wide operating temperature range (-55°C to 175°C)
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40V
On-Resistance (Rds(on)): 2.6mΩ
Continuous Drain Current (Id): 24A
Input Capacitance (Ciss): 4230pF
Gate Threshold Voltage (Vgs(th)): 3V
Gate Charge (Qg): 56nC
Quality and Safety Features
RoHS3 compliant
Surface mount package for high-density designs
Compatibility
Suitable for a variety of power conversion and control applications
Application Areas
Power supplies
Motor drives
Amplifiers
Automotive electronics
Product Lifecycle
Current product, no discontinuation or replacement plans announced
Several Key Reasons to Choose This Product
High power density and efficiency with low on-resistance
Wide operating temperature range for reliable performance
Suitable for high-current applications
Compact surface mount package for space-constrained designs
RoHS3 compliant for environmental compliance