Manufacturer Part Number
FDME820NZT
Manufacturer
onsemi
Introduction
N-Channel MOSFET transistor
Part of the PowerTrench series
Product Features and Performance
20V Drain to Source Voltage (Vdss)
±12V Gate to Source Voltage (Vgs)
18mΩ On-Resistance (Rds(on)) at 9A, 4.5V
9A Continuous Drain Current (Id) at 25°C
865pF Input Capacitance (Ciss) at 10V
1W Power Dissipation at 25°C
-55°C to 150°C Operating Temperature Range
Product Advantages
Low on-resistance for improved efficiency
High current handling capability
Compact MicroFET 1.6x1.6 Thin package
Surface mount design for easy integration
Key Technical Parameters
MOSFET technology
N-Channel FET type
1V Gate-Source Threshold Voltage (Vgs(th)) at 250A
5nC Gate Charge (Qg) at 4.5V
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging
Compatibility
Compatible with a wide range of electronic circuits and applications
Application Areas
Power management
Motor control
Switching circuits
Industrial and consumer electronics
Product Lifecycle
Current production, no discontinuation plans
Replacements and upgrades available as technology advances
Key Reasons to Choose This Product
Excellent performance-to-size ratio
High reliability and efficiency
Broad temperature range for versatile applications
Easy surface mount integration
Compliance with industry safety standards
